COMMANDE D un convertiseur AC/DC 脿 deux niveaux par hysteresis
标签： convertiseur hysteresis COMMANDE niveaux
上传时间： 2017-03-30
上传用户：nairui21
The equal-area theorem●This is sinusoidal PWM (SPWM)●The equal-area theorem can be appliedto realize any shape of waveforms ●Natural sampling●Calculation based on equal-area criterion●Selected harmonic elimination●Regular sampling●hysteresis-band control●Triangular wave comparison withfeedback control
上传时间： 2013-11-22
上传用户：linyao
磁芯电感器的谐波失真分析 摘 要：简述了改进铁氧体软磁材料比损耗系数和磁滞常数ηB，从而降低总谐波失真THD的历史过程，分析了诸多因数对谐波测量的影响，提出了磁心性能的调控方向。 关键词：比损耗系数， 磁滞常数ηB ，直流偏置特性DC-Bias，总谐波失真THD Analysis on THD of the fer rite co res u se d i n i nductancShi Yan Nanjing Finemag Technology Co. Ltd., Nanjing 210033 Abstract: Histrory of decreasing THD by improving the ratio loss coefficient and hysteresis constant of soft magnetic ferrite is briefly narrated. The effect of many factors which affect the harmonic wave testing is analysed. The way of improving the performance of ferrite cores is put forward. Key words: ratio loss coefficient，hysteresis constant，DC-Bias，THD 近年来，变压器生产厂家和软磁铁氧体生产厂家，在电感器和变压器产品的总谐波失真指标控制上，进行了深入的探讨和广泛的合作，逐步弄清了一些似是而非的问题。从工艺技术上采取了不少有效措施，促进了质量问题的迅速解决。本文将就此热门话题作一些粗浅探讨。 一、 历史回顾 总谐波失真（Total harmonic distortion） ，简称THD，并不是什么新的概念，早在几十年前的载波通信技术中就已有严格要求<1>。1978年邮电部公布的标准YD/Z17－78“载波用铁氧体罐形磁心”中，规定了高μQ材料制作的无中心柱配对罐形磁心详细的测试电路和方法。如图一电路所示，利用LC组成的150KHz低通滤波器在高电平输入的情况下测量磁心产生的非线性失真。这种相对比较的实用方法，专用于无中心柱配对罐形磁心的谐波衰耗测试。 这种磁心主要用于载波电报、电话设备的遥测振荡器和线路放大器系统，其非线性失真有很严格的要求。 图中 ZD —— QF867 型阻容式载频振荡器，输出阻抗 150Ω， Ld47 —— 47KHz 低通滤波器，阻抗 150Ω，阻带衰耗大于61dB， Lg88 ——并联高低通滤波器，阻抗 150Ω，三次谐波衰耗大于61dB Ld88 ——并联高低通滤波器，阻抗 150Ω，三次谐波衰耗大于61dB FD —— 30～50KHz 放大器， 阻抗 150Ω， 增益不小于 43 dB，三次谐波衰耗b3(0)≥91 dB, DP —— Qp373 选频电平表，输入高阻抗， L ——被测无心罐形磁心及线圈， C ——聚苯乙烯薄膜电容器CMO-100V-707APF±0.5%,二只。 测量时，所配用线圈应用丝包铜电磁线SQJ9×0.12(JB661-75)在直径为16.1mm的线架上绕制 120 匝， （线架为一格） ， 其空心电感值为 318μH（误差1％） 被测磁心配对安装好后，先调节振荡器频率为 36.6～40KHz， 使输出电平值为+17.4 dB， 即选频表在 22′端子测得的主波电平 （P2）为+17.4 dB，然后在33′端子处测得输出的三次谐波电平（P3）， 则三次谐波衰耗值为：b3(+2)= P2+S+ P3 式中：S 为放大器增益dB 从以往的资料引证， 就可以发现谐波失真的测量是一项很精细的工作，其中测量系统的高、低通滤波器，信号源和放大器本身的三次谐波衰耗控制很严，阻抗必须匹配，薄膜电容器的非线性也有相应要求。滤波器的电感全由不带任何磁介质的大空心线圈绕成，以保证本身的“洁净” ，不至于造成对磁心分选的误判。 为了满足多路通信整机的小型化和稳定性要求， 必须生产低损耗高稳定磁心。上世纪 70 年代初，1409 所和四机部、邮电部各厂，从工艺上改变了推板空气窑烧结，出窑后经真空罐冷却的落后方式，改用真空炉，并控制烧结、冷却气氛。技术上采用共沉淀法攻关试制出了μQ乘积 60 万和 100 万的低损耗高稳定材料，在此基础上，还实现了高μ7000～10000材料的突破，从而大大缩短了与国外企业的技术差异。当时正处于通信技术由FDM（频率划分调制）向PCM（脉冲编码调制） 转换时期， 日本人明石雅夫发表了μQ乘积125 万为 0.8×10 ，100KHz）的超优铁氧体材料<3>，其磁滞系数降为优铁
上传时间： 2014-12-23
上传用户：7891
The TRS232E is a dual driver/receiver that includes a capacitive voltage generator to supply TIA/RS-232-Fvoltage levels from a single 5-V supply. Each receiver converts TIA/RS-232-F inputs to 5-V TTL/CMOS levels.This receiver has a typical threshold of 1.3 V, a typical hysteresis of 0.5 V, and can accept ±30-V inputs. Eachdriver converts TTL/CMOS input levels into TIA/RS-232-F levels. The driver, receiver, and voltage-generatorfunctions are available as cells in the Texas Instruments LinASIC™ library.
上传时间： 2013-10-07
上传用户：waitingfy
All inputs of the C16x family have Schmitt-Trigger input characteristics. These Schmitt-Triggers are intended to always provide proper internal low and high levels, even if anundefined voltage level (between TTL-VIL and TTL-VIH) is externally applied to the pin.The hysteresis of these inputs, however, is very small, and can not be properly used in anapplication to suppress signal noise, and to shape slow rising/falling input transitions.Thus, it must be taken care that rising/falling input signals pass the undefined area of theTTL-specification between VIL and VIH with a sufficient rise/fall time, as generally usualand specified for TTL components (e.g. 74LS series: gates 1V/us, clock inputs 20V/us).The effect of the implemented Schmitt-Trigger is that even if the input signal remains inthe undefined area, well defined low/high levels are generated internally. Note that allinput signals are evaluated at specific sample points (depending on the input and theperipheral function connected to it), at that signal transitions are detected if twoconsecutive samples show different levels. Thus, only the current level of an input signalat these sample points is relevant, that means, the necessary rise/fall times of the inputsignal is only dependant on the sample rate, that is the distance in time between twoconsecutive evaluation time points. If an input signal, for instance, is sampled throughsoftware every 10us, it is irrelevant, which input level would be seen between thesamples. Thus, it would be allowable for the signal to take 10us to pass through theundefined area. Due to the sample rate of 10us, it is assured that only one sample canoccur while the signal is within the undefined area, and no incorrect transition will bedetected. For inputs which are connected to a peripheral function, e.g. capture inputs, thesample rate is determined by the clock cycle of the peripheral unit. In the case of theCAPCOM unit this means a sample rate of 400ns @ 20MHz CPU clock. This requiresinput signals to pass through the undefined area within these 400ns in order to avoidmultiple capture events.For input signals, which do not provide the required rise/fall times, external circuitry mustbe used to shape the signal transitions.In the attached diagram, the effect of the sample rate is shown. The numbers 1 to 5 in thediagram represent possible sample points. Waveform a) shows the result if the inputsignal transition time through the undefined TTL-level area is less than the time distancebetween the sample points (sampling at 1, 2, 3, and 4). Waveform b) can be the result ifthe sampling is performed more than once within the undefined area (sampling at 1, 2, 5,3, and 4).Sample points:1. Evaluation of the signal clearly results in a low level2. Either a low or a high level can be sampled here. If low is sampled, no transition willbe detected. If the sample results in a high level, a transition is detected, and anappropriate action (e.g. capture) might take place.3. Evaluation here clearly results in a high level. If the previous sample 2) had alreadydetected a high, there is no change. If the previous sample 2) showed a low, atransition from low to high is detected now.
上传时间： 2013-10-23
上传用户：copu
All inputs of the C16x family have Schmitt-Trigger input characteristics. These Schmitt-Triggers are intended to always provide proper internal low and high levels, even if anundefined voltage level (between TTL-VIL and TTL-VIH) is externally applied to the pin.The hysteresis of these inputs, however, is very small, and can not be properly used in anapplication to suppress signal noise, and to shape slow rising/falling input transitions.Thus, it must be taken care that rising/falling input signals pass the undefined area of theTTL-specification between VIL and VIH with a sufficient rise/fall time, as generally usualand specified for TTL components (e.g. 74LS series: gates 1V/us, clock inputs 20V/us).The effect of the implemented Schmitt-Trigger is that even if the input signal remains inthe undefined area, well defined low/high levels are generated internally. Note that allinput signals are evaluated at specific sample points (depending on the input and theperipheral function connected to it), at that signal transitions are detected if twoconsecutive samples show different levels. Thus, only the current level of an input signalat these sample points is relevant, that means, the necessary rise/fall times of the inputsignal is only dependant on the sample rate, that is the distance in time between twoconsecutive evaluation time points. If an input signal, for instance, is sampled throughsoftware every 10us, it is irrelevant, which input level would be seen between thesamples. Thus, it would be allowable for the signal to take 10us to pass through theundefined area. Due to the sample rate of 10us, it is assured that only one sample canoccur while the signal is within the undefined area, and no incorrect transition will bedetected. For inputs which are connected to a peripheral function, e.g. capture inputs, thesample rate is determined by the clock cycle of the peripheral unit. In the case of theCAPCOM unit this means a sample rate of 400ns @ 20MHz CPU clock. This requiresinput signals to pass through the undefined area within these 400ns in order to avoidmultiple capture events.
上传时间： 2014-04-02
上传用户：han_zh
磁芯电感器的谐波失真分析 摘 要：简述了改进铁氧体软磁材料比损耗系数和磁滞常数ηB，从而降低总谐波失真THD的历史过程，分析了诸多因数对谐波测量的影响，提出了磁心性能的调控方向。 关键词：比损耗系数， 磁滞常数ηB ，直流偏置特性DC-Bias，总谐波失真THD Analysis on THD of the fer rite co res u se d i n i nductancShi Yan Nanjing Finemag Technology Co. Ltd., Nanjing 210033 Abstract: Histrory of decreasing THD by improving the ratio loss coefficient and hysteresis constant of soft magnetic ferrite is briefly narrated. The effect of many factors which affect the harmonic wave testing is analysed. The way of improving the performance of ferrite cores is put forward. Key words: ratio loss coefficient，hysteresis constant，DC-Bias，THD 近年来，变压器生产厂家和软磁铁氧体生产厂家，在电感器和变压器产品的总谐波失真指标控制上，进行了深入的探讨和广泛的合作，逐步弄清了一些似是而非的问题。从工艺技术上采取了不少有效措施，促进了质量问题的迅速解决。本文将就此热门话题作一些粗浅探讨。 一、 历史回顾 总谐波失真（Total harmonic distortion） ，简称THD，并不是什么新的概念，早在几十年前的载波通信技术中就已有严格要求<1>。1978年邮电部公布的标准YD/Z17－78“载波用铁氧体罐形磁心”中，规定了高μQ材料制作的无中心柱配对罐形磁心详细的测试电路和方法。如图一电路所示，利用LC组成的150KHz低通滤波器在高电平输入的情况下测量磁心产生的非线性失真。这种相对比较的实用方法，专用于无中心柱配对罐形磁心的谐波衰耗测试。 这种磁心主要用于载波电报、电话设备的遥测振荡器和线路放大器系统，其非线性失真有很严格的要求。 图中 ZD —— QF867 型阻容式载频振荡器，输出阻抗 150Ω， Ld47 —— 47KHz 低通滤波器，阻抗 150Ω，阻带衰耗大于61dB， Lg88 ——并联高低通滤波器，阻抗 150Ω，三次谐波衰耗大于61dB Ld88 ——并联高低通滤波器，阻抗 150Ω，三次谐波衰耗大于61dB FD —— 30～50KHz 放大器， 阻抗 150Ω， 增益不小于 43 dB，三次谐波衰耗b3(0)≥91 dB, DP —— Qp373 选频电平表，输入高阻抗， L ——被测无心罐形磁心及线圈， C ——聚苯乙烯薄膜电容器CMO-100V-707APF±0.5%,二只。 测量时，所配用线圈应用丝包铜电磁线SQJ9×0.12(JB661-75)在直径为16.1mm的线架上绕制 120 匝， （线架为一格） ， 其空心电感值为 318μH（误差1％） 被测磁心配对安装好后，先调节振荡器频率为 36.6～40KHz， 使输出电平值为+17.4 dB， 即选频表在 22′端子测得的主波电平 （P2）为+17.4 dB，然后在33′端子处测得输出的三次谐波电平（P3）， 则三次谐波衰耗值为：b3(+2)= P2+S+ P3 式中：S 为放大器增益dB 从以往的资料引证， 就可以发现谐波失真的测量是一项很精细的工作，其中测量系统的高、低通滤波器，信号源和放大器本身的三次谐波衰耗控制很严，阻抗必须匹配，薄膜电容器的非线性也有相应要求。滤波器的电感全由不带任何磁介质的大空心线圈绕成，以保证本身的“洁净” ，不至于造成对磁心分选的误判。 为了满足多路通信整机的小型化和稳定性要求， 必须生产低损耗高稳定磁心。上世纪 70 年代初，1409 所和四机部、邮电部各厂，从工艺上改变了推板空气窑烧结，出窑后经真空罐冷却的落后方式，改用真空炉，并控制烧结、冷却气氛。技术上采用共沉淀法攻关试制出了μQ乘积 60 万和 100 万的低损耗高稳定材料，在此基础上，还实现了高μ7000～10000材料的突破，从而大大缩短了与国外企业的技术差异。当时正处于通信技术由FDM（频率划分调制）向PCM（脉冲编码调制） 转换时期， 日本人明石雅夫发表了μQ乘积125 万为 0.8×10 ，100KHz）的超优铁氧体材料<3>，其磁滞系数降为优铁
上传时间： 2013-12-15
上传用户：天空说我在
int trace (int i, int j, int low, IMAGE im,IMAGE mag, IMAGE ori) float gauss(float x, float sigma) float dGauss (float x, float sigma) float meanGauss (float x, float sigma) void hysteresis (int high, int low, IMAGE im, IMAGE mag, IMAGE oriim) void canny (float s, IMAGE im, IMAGE mag, IMAGE ori)
上传时间： 2015-01-29
上传用户：杜莹12345
（1）变换模块 本模块包含两部分内容：利用 反变换规则将 坐标系下的两相电流转换成三相电流；利用间接矢量控制，得到转子角位移，公式如下（2） 电流滞环控制器(hysteresis current controller)模块（3） 电压源型逆变器(Voltage sourse inverter,VSI)模块 （4） 变换模块（5） 感应电机(IM)模块 该感应电机模型是基于交流电机的电路方程、转矩方程以及运动方程建立起来的。该仿真模块为一个三输入、六输出的系统子模块。输入为 坐标系中定子电压，输出则是 坐标系中的转子电流和转子磁链，以及输出的转矩。（6） 电流反馈模块（7）速度控制器模块
上传时间： 2014-03-10
上传用户：yy541071797
The PW2606B is a front-end over voltage and over current protection device. It achieves wide inputvoltage range from 2.5VDC to 40VDC. The over voltage threshold can be programmed externally orset to internal default setting. The low resistance of integrated power path nFET switch ensures betterperformance for battery charging system applications. It can deliver up to 1A current to satisfy thebattery supply system. It integrates the over-temperature protection shutdown and auto-recoverycircuit with hysteresis to protect against over current events
标签： pw2606b
上传时间： 2022-02-11
上传用户：joshau007
