函数再现机构设计 试设计一曲柄摇杆机构，再现函数 要求： 输入构件的转角范围180°，输出构件摆角范围30°，即： 当输入构件从a转至a+90时，输出构件从b转至b+30 当输入构件从a+90转至a+180时，输出构件从b+30转至b
上传时间： 2013-12-17
上传用户：英雄
这个连接池是直接从JIVE中取出来的，进行了一下修改，使得连接参数直接在程序中设定而不是从属性文件中读取。 [b]用法：[/b] 先设定自己的连接参数，在DbConnectionDefaultPool.java文件的loadProperties方法中。注意你也需要设定连接池的log文件的存放位置。
上传时间： 2016-11-21
上传用户：TF2015
汉诺塔！！！ Simulate the movement of the Towers of Hanoi puzzle Bonus is possible for using animation eg. if n = 2 A→B A→C B→C if n = 3 A→C A→B C→B A→C B→A B→C A→C
标签： the animation Simulate movement
上传时间： 2017-02-11
上传用户：waizhang
PIC16C63单片机UART通信——A机读取时钟芯片DS1302获得当前时间，通过UART通信传给B机，B机使用LCD1602显示当前时间
上传时间： 2013-11-30
上传用户：shanml
•ARINC429总线协议是美国航空电子工程委员会(Airlines Engineering Committee)于1977年7月提出的，并于同年发表并获得批准使用，它的全称是数字式信息传输系统(Digital Information Transmission System ) 。协议标准规定了航空电子设备及有关系统间的数字信息传输要求。ARINC429广泛应用在先进的民航客机中，如B-737、B-757、B-767，俄制军用飞机也选用了类似的技术。
标签： ARINC429 总线
上传时间： 2015-03-25
上传用户：423619775
A design about 8051 (running at 12MHz) based system with 3 7-Seg displays and two buttons to implement the following functions. 1. When press the + button, the display C = A+B. 2. When press the button, the display C = A - B. “A” and “B” are 8-bit inputs when “C” is 9-bit output.
上传时间： 2015-05-05
上传用户：guoxiy
ARINC429总线协议是美国航空电子工程委员会(Airlines Engineering Committee)于1977年7月提出的，并于同年发表并获得批准使用，它的全称是数字式信息传输系统(Digital Information Transmission System ) 。协议标准规定了航空电子设备及有关系统间的数字信息传输要求。ARINC429广泛应用在先进的民航客机中，如B-737、B-757、B-767，俄制军用飞机也选用了类似的技术。 ARINC429总线结构简单、性能稳定，抗干扰性强。最大的优势在于可靠性高。飞机上的ARINC429数据总线，用于在系统和设备之间传送上千种不同类型的参数，如航向、真空速、马赫数等。
标签： 429总线协议
上传时间： 2016-08-17
上传用户：w50403
/****************temic*********t5557***********************************/ #include <at892051.h> #include <string.h> #include <intrins.h> #include <stdio.h> #define uchar unsigned char #define uint unsigned int #define ulong unsigned long //STC12C2051AD的SFR定义 sfr WDT_CONTR = 0xe1;//stc2051的看门狗?????? /**********全局常量************/ //写卡的命令 #define write_command0 0//写密码 #define write_command1 1//写配置字 #define write_command2 2//密码写数据 #define write_command3 3//唤醒 #define write_command4 4//停止命令 #define TRUE 1 #define FALSE 0 #define OK 0 #define ERROR 255 //读卡的时间参数us #define ts_min 250//270*11.0592/12=249//取近似的整数 #define ts_max 304//330*11.0592/12=304 #define t1_min 73//90*11.0592/12=83:-10调整 #define t1_max 156//180*11.0592/12=166 #define t2_min 184//210*11.0592/12=194 #define t2_max 267//300*11.0592/12=276 //***********不采用中断处理:采用查询的方法读卡时关所有中断****************/ sbit p_U2270B_Standby = P3^5;//p_U2270B_Standby PIN=13 sbit p_U2270B_CFE = P3^3;//p_U2270B_CFE PIN=6 sbit p_U2270B_OutPut = P3^7;//p_U2270B_OutPut PIN=2 sbit wtd_sck = P1^7;//SPI总线 sbit wtd_si = P1^3; sbit wtd_so = P1^2; sbit iic_data = P1^2;//lcd IIC sbit iic_clk = P1^7; sbit led_light = P1^6;//测试绿灯 sbit led_light1 = P1^5;//测试红灯 sbit led_light_ok = P1^1;//读卡成功标志 sbit fengmingqi = P1^5; /***********全局变量************************************/ uchar data Nkey_a[4] = {0xA0, 0xA1, 0xA2, 0xA3};//初始密码 //uchar idata card_snr[4]; //配置字 uchar data bankdata[28] = {1,2,3,4,5,6,7,1,2,3,4,5,6,7,1,2,3,4,5,6,7,1,2,3,4,5,6,7}; //存储卡上用户数据(1-7)7*4=28 uchar data cominceptbuff[6] = {1,2,3,4,5,6};//串口接收数组ram uchar command; //第一个命令 uchar command1;// //uint temp; uchar j,i; uchar myaddr = 8; //uchar ywqz_count,time_count; //ywqz jishu: uchar bdata DATA; sbit BIT0 = DATA^0; sbit BIT1 = DATA^1; sbit BIT2 = DATA^2; sbit BIT3 = DATA^3; sbit BIT4 = DATA^4; sbit BIT5 = DATA^5; sbit BIT6 = DATA^6; sbit BIT7 = DATA^7; uchar bdata DATA1; sbit BIT10 = DATA1^0; sbit BIT11 = DATA1^1; sbit BIT12 = DATA1^2; sbit BIT13 = DATA1^3; sbit BIT14 = DATA1^4; sbit BIT15 = DATA1^5; sbit BIT16 = DATA1^6; sbit BIT17 = DATA1^7; bit i_CurrentLevel;//i_CurrentLevel BIT 00H(Saves current level of OutPut pin of U2270B) bit timer1_end; bit read_ok = 0; //缓存定时值,因用同一个定时器 union HLint { uint W; struct { uchar H;uchar L; } B; };//union HLint idata a union HLint data a; //缓存定时值,因用同一个定时器 union HLint0 { uint W; struct { uchar H; uchar L; } B; };//union HLint idata a union HLint0 data b; /**********************函数原型*****************/ //读写操作 void f_readcard(void);//全部读出1~7 AOR唤醒 void f_writecard(uchar x);//根据命令写不同的内容和操作 void f_clearpassword(void);//清除密码 void f_changepassword(void);//修改密码 //功能子函数 void write_password(uchar data *data p);//写初始密码或数据 void write_block(uchar x,uchar data *data p);//不能用通用指针 void write_bit(bit x);//写位 /*子函数区*****************************************************/ void delay_2(uint x) //延时,时间x*10us@12mhz,最小20us@12mhz { x--; x--; while(x) { _nop_(); _nop_(); x--; } _nop_();//WDT_CONTR=0X3C;不能频繁的复位 _nop_(); } ///////////////////////////////////////////////////////////////////// void initial(void) { SCON = 0x50; //串口方式1,允许接收 //SCON =0x50; //01010000B:10位异步收发,波特率可变,SM2=0不用接收到有效停止位才RI=1, //REN=1允许接收 TMOD = 0x21; //定时器1 定时方式2(8位),定时器0 定时方式1(16位) TCON = 0x40; //设定时器1 允许开始计时(IT1=1) TH1 = 0xfD; //FB 18.432MHz 9600 波特率 TL1 = 0xfD; //fd 11.0592 9600 IE = 0X90; //EA=ES=1 TR1 = 1; //启动定时器 WDT_CONTR = 0x3c;//使能看门狗 p_U2270B_Standby = 0;//单电源 PCON = 0x00; IP = 0x10;//uart you xian XXXPS PT1 PX1 PT0 PX0 led_light1 = 1; led_light = 0; p_U2270B_OutPut = 1; } /************************************************/ void f_readcard()//读卡 { EA = 0;//全关,防止影响跳变的定时器计时 WDT_CONTR = 0X3C;//喂狗 p_U2270B_CFE = 1;// delay_2(232); //>2.5ms /* // aor 用唤醒功能来防碰撞 p_U2270B_CFE = 0; delay_2(18);//start gap>150us write_bit(1);//10=操作码读0页 write_bit(0); write_password(&bankdata[24]);//密码block7 p_U2270B_CFE =1 ;// delay_2(516);//编程及确认时间5.6ms */ WDT_CONTR = 0X3C;//喂狗 led_light = 0; b.W = 0; while(!(read_ok == 1)) { //while(p_U2270B_OutPut);//等一个稳定的低电平?超时判断? while(!p_U2270B_OutPut);//等待上升沿的到来同步信号检测1 TR0 = 1; //deng xia jiang while(p_U2270B_OutPut);//等待下降沿 TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1;//定时器晚启动10个周期 //同步头 if((324 < a.W) && (a.W < 353)) ;//检测同步信号1 else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } //等待上升沿 while(!p_U2270B_OutPut); TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1;//b.N1<<=8; if(a.B.L < 195);//0.5p else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } //读0~7块的数据 for(j = 0;j < 28;j++) { //uchar i; for(i = 0;i < 16;i++)//8个位 { //等待下降沿的到来 while(p_U2270B_OutPut); TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1; if(t2_max < a.W/*)&&(a.W < t2_max)*/)//1P { b.W >>= 2;//先左移再赋值 b.B.L += 0xc0; i++; } else if(t1_min < a.B.L/*)&&(a.B.L < t1_max)*/)//0.5p { b.W >>= 1; b.B.L += 0x80; } else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } i++; while(!p_U2270B_OutPut);//上升 TR0 = 0; a.B.H = TH0; a.B.L = TL0; TH0 = TL0 = 0; TR0 = 1; if(t2_min < a.W/*)&&(a.W < t2_max)*/)//1P { b.W >>= 2; i++; } else if(t1_min < a.B.L/*a.W)&&(a.B.L < t1_max)*/)//0.5P //else if(!(a.W==0)) { b.W >>= 1; //temp+=0x00; //led_light1=0;led_light=1;delay_2(40000); } else { TR0 = 0; TH0 = TL0 = 0; goto read_error; } i++; } //取出奇位 DATA = b.B.L; BIT13 = BIT7; BIT12 = BIT5; BIT11 = BIT3; BIT10 = BIT1; DATA = b.B.H; BIT17 = BIT7; BIT16 = BIT5; BIT15 = BIT3; BIT14 = BIT1; bankdata[j] = DATA1; } read_ok = 1;//读卡完成了 read_error: _nop_(); } } /***************************************************/ void f_writecard(uchar x)//写卡 { p_U2270B_CFE = 1; delay_2(232); //>2.5ms //psw=0 standard write if (x == write_command0)//写密码:初始化密码 { uchar i; uchar data *data p; p = cominceptbuff; p_U2270B_CFE = 0; delay_2(31);//start gap>330us write_bit(1);//写操作码1:10 write_bit(0);//写操作码0 write_bit(0);//写锁定位0 for(i = 0;i < 35;i++) { write_bit(1);//写数据位1 } p_U2270B_CFE = 1; led_light1 = 0; led_light = 1; delay_2(40000);//测试使用 //write_block(cominceptbuff[4],p); p_U2270B_CFE = 1; bankdata[20] = cominceptbuff[0];//密码存入 bankdata[21] = cominceptbuff[1]; bankdata[22] = cominceptbuff[2]; bankdata[23] = cominceptbuff[3]; } else if (x == write_command1)//配置卡参数:初始化 { uchar data *data p; p = cominceptbuff; write_bit(1);//写操作码1:10 write_bit(0);//写操作码0 write_bit(0);//写锁定位0 write_block(cominceptbuff[4],p); p_U2270B_CFE= 1; } //psw=1 pssword mode else if(x == write_command2) //密码写数据 { uchar data*data p; p = &bankdata[24]; write_bit(1);//写操作码1:10 write_bit(0);//写操作码0 write_password(p);//发口令 write_bit(0);//写锁定位0 p = cominceptbuff; write_block(cominceptbuff[4],p);//写数据 } else if(x == write_command3)//aor //唤醒 { //cominceptbuff[1]操作码10 X xxxxxB uchar data *data p; p = cominceptbuff; write_bit(1);//10 write_bit(0); write_password(p);//密码 p_U2270B_CFE = 1;//此时数据不停的循环传出 } else //停止操作码 { write_bit(1);//11 write_bit(1); p_U2270B_CFE = 1; } p_U2270B_CFE = 1; delay_2(560);//5.6ms } /************************************/ void f_clearpassword()//清除密码 { uchar data *data p; uchar i,x; p = &bankdata[24];//原密码 p_U2270B_CFE = 0; delay_2(18);//start gap>150us //操作码10:10xxxxxxB write_bit(1); write_bit(0); for(x = 0;x < 4;x++)//发原密码 { DATA = *(p++); for(i = 0;i < 8;i++) { write_bit(BIT0); DATA >>= 1; } } write_bit(0);//锁定位0:0 p = &cominceptbuff[0]; write_block(0x00,p);//写新配置参数:pwd=0 //密码无效:即清除密码 DATA = 0x00;//停止操作码00000000B for(i = 0;i < 2;i++) { write_bit(BIT7); DATA <<= 1; } p_U2270B_CFE = 1; delay_2(560);//5.6ms } /*********************************/ void f_changepassword()//修改密码 { uchar data *data p; uchar i,x,addr; addr = 0x07;//block7 p = &Nkey_a[0];//原密码 DATA = 0x80;//操作码10:10xxxxxxB for(i = 0;i < 2;i++) { write_bit(BIT7); DATA <<= 1; } for(x = 0;x < 4;x++)//发原密码 { DATA = *(p++); for(i = 0;i < 8;i++) { write_bit(BIT7); DATA >>= 1; } } write_bit(0);//锁定位0:0 p = &cominceptbuff[0]; write_block(0x07,p);//写新密码 p_U2270B_CFE = 1; bankdata[24] = cominceptbuff[0];//密码存入 bankdata[25] = cominceptbuff[1]; bankdata[26] = cominceptbuff[2]; bankdata[27] = cominceptbuff[3]; DATA = 0x00;//停止操作码00000000B for(i = 0;i < 2;i++) { write_bit(BIT7); DATA <<= 1; } p_U2270B_CFE = 1; delay_2(560);//5.6ms } /***************************子函数***********************************/ void write_bit(bit x)//写一位 { if(x) { p_U2270B_CFE = 1; delay_2(32);//448*11.0592/120=42延时448us p_U2270B_CFE = 0; delay_2(28);//280*11.0592/120=26写1 } else { p_U2270B_CFE = 1; delay_2(92);//192*11.0592/120=18 p_U2270B_CFE = 0; delay_2(28);//280*11.0592/120=26写0 } } /*******************写一个block*******************/ void write_block(uchar addr,uchar data *data p) { uchar i,j; for(i = 0;i < 4;i++)//block0数据 { DATA = *(p++); for(j = 0;j < 8;j++) { write_bit(BIT0); DATA >>= 1; } } DATA = addr <<= 5;//0地址 for(i = 0;i < 3;i++) { write_bit(BIT7); DATA <<= 1; } } /*************************************************/ void write_password(uchar data *data p) { uchar i,j; for(i = 0;i < 4;i++)// { DATA = *(p++); for(j = 0;j < 8;j++) { write_bit(BIT0); DATA >>= 1; } } } /*************************************************/ void main() { initial(); TI = RI = 0; ES = 1; EA = 1; delay_2(28); //f_readcard(); while(1) { f_readcard(); //读卡 f_writecard(command1); //写卡 f_clearpassword(); //清除密码 f_changepassword(); //修改密码 } }
标签： 12345
上传时间： 2017-10-20
上传用户：my_lcs
Lithium–sulfur batteries are a promising energy-storage technology due to their relatively low cost and high theoretical energy density. However, one of their major technical problems is the shuttling of soluble polysulfides between electrodes, resulting in rapid capacity fading. Here, we present a metal–organic framework (MOF)-based battery separator to mitigate the shuttling problem. We show that the MOF-based separator acts as an ionic sieve in lithium–sulfur batteries, which selectively sieves Li+ ions while e ciently suppressing undesired polysulfides migrating to the anode side. When a sulfur-containing mesoporous carbon material (approximately 70 wt% sulfur content) is used as a cathode composite without elaborate synthesis or surface modification, a lithium–sulfur battery with a MOF-based separator exhibits a low capacity decay rate (0.019% per cycle over 1,500 cycles). Moreover, there is almost no capacity fading after the initial 100 cycles. Our approach demonstrates the potential for MOF-based materials as separators for energy-storage applications.
上传时间： 2017-11-23
上传用户：653357637
Lithium–sulfur (Li–S) batteries with high energy density and long cycle life are considered to be one of the most promising next-generation energy-storage systems beyond routine lithium-ion batteries. Various approaches have been proposed to break down technical barriers in Li–S battery systems. The use of nanostructured metal oxides and sulfides for high sulfur utilization and long life span of Li–S batteries is reviewed here. The relationships between the intrinsic properties of metal oxide/sulfide hosts and electrochemical performances of Li–S batteries are discussed. Nanostructured metal oxides/ sulfides hosts used in solid sulfur cathodes, separators/interlayers, lithium- metal-anode protection, and lithium polysulfides batteries are discussed respectively. Prospects for the future developments of Li–S batteries with nanostructured metal oxides/sulfides are also discussed.
上传时间： 2017-11-23
上传用户：653357637
