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V 50 K 126863554200 DIODE Y 1 D 0 0 100 90 Z 10 i 6 P 5 170 0 170 10 0 1 0 U 10 -30 13 0 3 0 LEVEL=STD U 0 -50 10 0 3 0 PARTS=1 U 0 -60 10 0 3 3 PKG_TYPE=BILED U 35 90 10 0 3 0 REFDES=LED?

V 50 K 126863554200 DIODE Y 1 D 0 0 100 90 Z 10 i 6 U 10 -30 13 0 3 0 LEVEL=STD U 0 -50 10 0 3 0 PARTS=1 U 0 -60 10 0 3 3 PKG_TYPE=BILED U 35 90 10 0 3 0 REFDES=LED? U 50 -10 13 0 4 3 DEVICE

V 50 K 126863554200 DIODE Y 1 D 0 0 100 90 Z 10 i 4 U 50 -5 13 0 4 3 DEVICE=GA_BILEVEL_IDI U 10 -30 13 0 3 0 LEVEL=STD U 0 -50 10 0 3 0 PARTS=1 U 0 -60 10 0 3 3 PKG_TYPE=BILED U -15 -30 10 0

.ALIASES G_ABMI1 ABMI1(out+=BULK out-=0 ) CN @CHAPTER6.Hold-up time(sch_1):INS11597@ABM.ABM/I.Normal(chips) D_D1 D1(1=N 2=BULK ) CN @CHAPTER6.Hold-up time(sch_1):INS6296@DIODE.D1

.ALIASES G_ABMI1 ABMI1(out+=BULK out-=0 ) CN @CHAPTER6.Doubler(sch_1):INS3202@ABM.ABM/I.Normal(chips) D_D1 D1(1=N01637 2=BULK ) CN @CHAPTER6.Doubler(sch_1):INS1527@DIODE.D1N5406.

Ex2_12.CIR - Half-wave rectifier vs 1 0 PULSE( -15V 15V -0.25ms 0.5ms 0.5ms 2ms 5ms ) D 1 2 DMOD RB 2 3 0.5ohm VB 3 0 12V .MODEL DMOD D() ; Default diode .TRAN 1us 5ms .PROBE .END

v 20070216 1 L 300 400 300 0 3 0 0 0 -1 -1 L 300 400 600 200 3 0 0 0 -1 -1 T 400 600 5 10 0 0 0 0 1 device=DIODE L 600 200 300 0 3 0 0 0 -1 -1 L 600 400 600 0 3 0 0 0 -1 -1 P 0 200 200 200 1 0 0 { T 1

v 20070216 1 L 300 400 300 0 3 0 0 0 -1 -1 L 300 200 600 400 3 0 0 0 -1 -1 T 400 600 5 10 0 0 0 0 1 device=DIODE L 600 0 300 200 3 0 0 0 -1 -1 L 600 400 600 0 3 0 0 0 -1 -1 P 900 200 700 200 1 0 0 { T

v 20070216 1 L 300 400 300 0 3 0 0 0 -1 -1 L 300 400 600 200 3 0 0 0 -1 -1 T 400 600 5 10 0 0 0 0 1 device=DIODE L 600 200 300 0 3 0 0 0 -1 -1 L 600 400 600 0 3 0 0 0 -1 -1 P 0 200 200 200 1 0 0 { T 1

v 20070216 1 L 300 400 300 0 3 0 0 0 -1 -1 L 300 200 600 400 3 0 0 0 -1 -1 T 400 600 5 10 0 0 0 0 1 device=DIODE L 600 0 300 200 3 0 0 0 -1 -1 L 600 400 600 0 3 0 0 0 -1 -1 P 900 200 700 200 1 0 0 { T